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Linde leads in the production and supply of stable isotopes for advanced semiconductor manufacturing. When the critical dimensions decrease to atomic scale, individual isotopes behave in a distinct chemical and physical behavior. Isotopically pure thin films have enhanced properties and reduce risks that can attribute to undesirable isotopes.
Deuterium for hot carrier passivation
Even thinner films can get damaged at their interfaces by locally high electric fields caused by the effects of hot carrier. Linde has developed several deuterium-based products, which help our customers meet these new demands and can extend the life of the device by up to 50 times
- Deuterium (D2)
- Deuterated silane (SiD4)
- Deuterated ammonia (ND3)
Boron enrichment to avoid thermal neutron damage
Linde has also introduced boron 11 enriched diborane as an alternative to natural (non-enriched) diborane. The removal of boron 10 from diborane in small-scale devices is essential to extend the life of the device and the reduce minor error rates
- Boron 11 enriched boron trifluoride (11BF3)
- Boron 11 enriched diborane (11B2H6)
Methane carbon-12 enrichment for enhanced thermal conductivity
Linde supplies the carbon-12 enriched CH4 methane molecule, which the CVD process uses to make a thin film diamond or graphene. Isotopically pure carbon thin films have greatly enhanced thermal conductivity vs. naturally abundant thin films.
- 12C Diamond (99.9 atom%) - Over 8 times that of copper and over 1.5 that of natural abundance diamonds
- 12C Graphene (99.9 atom%) - Over 10 times that of copper and over 1.5 that of natural abundance graphenes
An innovative approach to both the manufacture and purification of isotope products enables Linde to meet the challenging requirements of all advanced materials applications.